preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi hvigbt modules CM1200HA-66H high power switching use insulated type i c ................................................................ 1200a v ces ....................................................... 3300v insulated type 1-element in a pack application inverters, converters, dc choppers, induction heating, dc to dc converters. CM1200HA-66H hvigbt modules (high voltage insulated gate bipolar transistor modules) outline drawing & circuit diagram dimensions in mm e g c ec circuit diagram c c e e e c 190 171 57 0.25 57 0.25 57 0.25 20 40 124 0.25 140 6 - m8 nuts 8 - 7mounting holes g e c cm 41.25 20.25 79.4 3 - m4 nuts 28 30 15 40 5.2 61.5 61.5 13 5 38 label hvigbt (high voltage insulated gate bipolar transistor) modules
preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi hvigbt modules CM1200HA-66H high power switching use insulated type hvigbt modules (high voltage insulated gate bipolar transistor modules) maximum ratings (tj = 25 c) collector current emitter current collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage mounting torque mass 3300 20 1200 2400 1200 2400 10400 ?0 ~ +150 ?0 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 v v a a a a w c c v n m n m n m kg v ge = 0v v ce = 0v t c = 25 c pulse (note 1) t c = 25 c pulse (note 1) t c = 25 c, igbt part charged part to base plate, rms, sinusoidal, ac 60hz 1min. main terminals screw m8 mounting screw m6 auxiliary terminals screw m4 typical value symbol item conditions unit ratings v ces v ges i c i cm i e (note 2) i em (note 2) p c (note 3) t j t stg v iso v v v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 1650v, i c = 1200a, v ge = 15v v cc = 1650v, i c = 1200a v ge1 = v ge2 = 15v r g = 2.5 ? resistive load switching operation i e = 1200a, v ge = 0v i e = 1200a die / dt = ?400a / s junction to case, igbt part junction to case, fwdi part case to fin, conductive grease applied i c = 120ma, v ce = 10v i c = 1200a, v ge = 15v (note 4) v ce = 10v v ge = 0v 15 0.5 5.72 1.60 2.00 2.50 1.00 4.29 1.20 0.012 0.024 ma a nf nf nf c s s s s v s c k/w k/w k/w 4.40 4.80 120 12.0 3.6 5.7 3.30 300 0.006 6.0 4.5 7.5 collector cutoff current gate-emitter threshold voltage gate-leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge contact thermal resistance min typ max i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec (note 2) t rr (note 2) q rr (note 2) r th(j-c)q r th(j-c)r r th(c-f) symbol item conditions v ge(th) v ce(sat) limits unit note 1. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 2. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. thermal resistance electrical characteristics (tj = 25 c) hvigbt (high voltage insulated gate bipolar transistor) modules
preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 performance curves mitsubishi hvigbt modules CM1200HA-66H high power switching use insulated type hvigbt (high voltage insulated gate bipolar transistor) modules output characteristics ( typical ) collector current i c ( a ) transfer characteristics ( typical ) collector current i c ( a ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) free-wheel diode forward characteristics ( typical ) emitter current i e ( a ) emitter-collector voltage v ec ( v ) collector-emitter saturation voltage characteristics ( typical ) 2400 800 400 0 10 0 246 1200 8 2000 1600 t j =25 c v ge =13v v ge =12v v ge =11v v ge =10v v ge =9v v ge =8v v ge =7v v ge =14v v ge =15v v ge =20v v ge =15v t j = 25 c t j = 125 c 2400 800 400 0 20 0 4812 1200 16 2000 1600 05 4 3 2 1 10 2 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 t j =25 c v ce =10v t j = 25 c t j = 125 c 0 8 6 4 2 2400 0 800 400 1200 1600 2000 collector-emitter saturation voltage v ce(sat) ( v ) 020 16 12 8 4 10 8 6 4 2 0 collector-emitter saturation voltage v ce(sat) ( v ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage characteristics ( typical ) t j = 25 c i c = 2400a i c = 1200a i c = 480a 10 1 23 10 1 5710 0 23 5710 1 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 capacitance vs. v ce ( typical ) capacitance c ies , c oes , c res ( nf ) collector-emitter voltage v ce ( v ) c ies c oes c res v ge = 0v, t j = 25 c c ies, c oes : f = 100khz c res : f = 1mhz
preliminary n otice: this is not a final specification. some parametric limits are subject to change. mar. 2001 mitsubishi hvigbt modules CM1200HA-66H high power switching use insulated type hvigbt (high voltage insulated gate bipolar transistor) modules 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 t d(off) v cc = 1650v, v ge = 15v r g = 2.5 ? , t j = 125 c inductive load t d(on) t r t f half-bridge switching characteristics ( typical ) switching times ( s ) collector current i c ( a ) v cc = 1650v, t j = 125 c inductive load v ge = 15v, r g = 2.5 ? t rr i rr reverse recovery characteristics of free-wheel diode ( typical ) reverse recovery time t rr ( s ) emitter current i e ( a ) reverse recovery current i rr ( a ) 7 5 3 2 10 2 7 5 5 3 2 10 3 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 single pulse t c = 25 c r th(j c) = 0.012k/ w transient thermal impedance characteristics ( igbt part ) normalized transient thermal impedance z th(j c) time ( s ) 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 single pulse t c = 25 c r th(j c) = 0.024k/ w normalized transient thermal impedance z th(j c) time ( s ) transient thermal impedance characteristics ( fwdi part ) 20 16 12 8 4 0 8000 10000 6000 0 2000 4000 v ge ?gate charge ( typical ) gate-emitter voltage v ge ( v ) gate charge q g ( nc ) v cc = 1650v i c = 1200a
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